Molecular Beam Epitaxy

(MBE)

The facility for the molecular beam epitaxy is designed for the growth of thin-film monocrystalline materials. The system consists of three growth chambers dedicated to different types of materials and their combinations. Quantum heterostructures based on GaAs/AlGaAs/InAs semiconductors with classical dopants are prepared in the first chamber. The second chamber allows for the growth of Mn- and noble-metals-containing ferromagnetic and antiferromagnetic materials for spintronics. The third chamber is dedicated to experimental materials with topological properties. The facility allows the transfer of partial structures in UHV conditions and contains UHV chamber for vacuum evaporation and electron-beam evaporation.

Equipment:

  • Veeco Gen II

  • Eberl Octoplus 400

LNSM Address: Cukrovarnická 10/112, 162 00, Prague 6, Czech Republic

LNSM E-mail: lnsm@fzu.cz