Metalorganic Vapor Phase Epitaxy (nanoHET)

Metal-organic vapor phase epitaxy (MOVPE) is suitable for the preparation of heterostructures containing layers with their thickness in the range of monoatomic layers to several micrometers. The equipment of NanoHET laboratory is suitable either for preparation of nitride wurzite heterostructures combining InGaN, AlGaN, InAlN, and GaN semiconductors or for the preparation of sphalerite type of III-V heterostructures combining GaAs, GaSb, InAs, AlAs, AlSb a InSb binary semiconductors and their ternary alloys. Both MOVPE apparatures are equipped by in situ monitoring of epitaxial process quality by special optical methods.


  • Spectrometer LabRAM HR Evolution

  • Apparatus for metalorganic Vapour Phase Epitaxy AIXTRON 3x2“ CCS Flip Top Reactor

  • Apparatus for metalorganic Vapour Phase Epitaxy AIXTRON 200

LNSM Address: Cukrovarnická 10/112, 162 00, Prague 6, Czech Republic

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