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Metalorganic Vapor Phase Epitaxy (nanoHET)

Metal-organic vapor phase epitaxy (MOVPE) apparatuses are suitable for the preparation of nitride semiconductor heterostructures containing layers with their thickness in the range of monoatomic layers to several micrometers. The group also offers the possibility to characterize semiconductors' luminescence and transport properties. The equipment of NanoHET laboratory is suitable either for the preparation of nitride wurzite heterostructures combining InGaN, AlGaN, InAlN, and GaN semiconductors or for the preparation of sphalerite type of III-V heterostructures combining GaAs, GaSb, InAs, AlAs, AlSb a InSb binary semiconductors and their ternary alloys. Both MOVPE apparatures are equipped by in situ monitoring of epitaxial process quality by special optical methods.

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Equipment:

  • Spectrometer LabRAM HR Evolution

  • Apparatus for metalorganic Vapour Phase Epitaxy AIXTRON 3x2“ CCS Flip Top Reactor

  • Apparatus for metalorganic Vapour Phase Epitaxy AIXTRON 200

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