Ing. Matěj Hývl’s poster named "Nanoscale Study of Hole-Selective Passivating Contacts for High-Efficiency Silicon Solar Cells Using C-AFM Tomography" was awarded one of three Best poster awards at the ICANS 28 conference (28th International Conference on Amorphous and Nanocrystalline Semiconductors), which took place from the 4th to the 9th of August in Palaiseau, France. The poster deals with advanced measurements of electrical properties of passivating contacts for silicon solar cells using atomic force microscopy (AFM), which he carries out with RNDr. Martin Ledinsky, Ph.D. in cooperation with the Swiss University of EPFL (École polytechnique fédérale de Lausanne). The principle of their measuring method, called C-AFM tomography, is a gradual removal of thin layers of material during the measurement. This makes it possible to use C-AFM, otherwise exclusively surface method, to obtain information from the volume of the material. C-AFM tomography allows them to eliminate a number of problems accompanying similar measurements in other groups dealing with this topic and thus to bring a unique look into the current problem of actual photovoltaics.