Researcher of LNSM from Laboratory of diamond and carbon nanostructures in cooperation with Electrotechnical Institute of Slovak Academy of Sciences in Bratislava (group of Dr. G. Vanko) published in Materials & Design journal a complex procedure for evaluation of thermally induced stresses in patterned diamond microstructures grown on the AlGaN/GaN heterostructures. The thermally induced stress in diamond-coated AlGaN/GaN high electron mobility transistors operating at higher temperatures plays an important role in influencing their electronic properties. Therefore, the stress investigation of such heterostructures is a relevant topic. Present study improved the knowledge about analysis and more precise evaluation of thermally-induced stresses by Raman spectroscopy.
Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures http://www.sciencedirect.com/science/article/pii/S0264127516307572